Metal/semiconductor spintronics and development of functional memory devices

We are conducting research on high-performance spin devices and their application to large-capacity nonvolatile memory using manganese-based materials, crystal growth of nitride nano-semiconductors, and technology to control the interface. We are also working on memory devices that integrate light and spin.

Introduction to Research

Interaction between spin currents generated in heavy metals, such as platinum, by photons and magnetization (spin) of magnetic materials and the research and development of memory devices that use the spin of light (circular deflection) as an information carrier and transfer it to a magnetic material.

Objective

We aim for the social implementation of high-performance magneto-resistive elements using proprietary metallic materials and semiconductors. In addition, we are promoting the proof-of-principle demonstration of optical spin memory based on a fusion of light and spin.

Publications

J. Appl. Phys. 131, 023901, 2022.

Appl. Phys. Lett. 120, 032406, 2022.